A robust curve tracing scheme for the simulation of bipolar breakdown characteristics with nonlocal impact ionization models

The authors propose a robust curve tracing scheme for the simulation of the complete Ic(Vce)|Is=0 breakdown characteristic of a bipolar transistor including snapback effects. Compared to classical curve tracing schemes, this new algorithm does not require the complete Jacobian matrix and/or external resistors of arbitrary size at the device contacts. Therefore it allows the application of nonlocal impact ionization models for the evaluation of bipolar breakdown characteristics.