Small-signal operation-based simplified verification of nonlinear models for millimeter-wave electron devices

Large-signal modeling of electron devices for nonlinear MMIC design is a fundamental topic for the microwave community. Many different nonlinear modeling approaches have been proposed in the last years, and quite often circuit designers suffer from the lack of reliable comparison criteria, on the basis of which identify what model, between those available, could be the most suitable for the desired application. Moreover, similar strategies are needed even from the research groups, whose activity is devoted to the model identification and extraction, in order to quantify the degree of accuracy achievable by the modeling approach adopted. In this paper an approach to verify large-signal model accuracy will be discussed, which is simply based on the comparison between de-embedded measurements and model predictions of Y-parameters versus the bias voltages at the intrinsic device ports.