Fabrication and modeling of optical interconnects using selective area growth metalorganic chemical vapor deposition

A computational model for selective area growth has been verified using a comprehensive suite of experimental measurements: atomic force microscopy, optical interference microscopy, microphotoluminescence, and micro-Xray diffraction. The model then allows for constructive engineering of the material thickness and composition through manipulation of the oxide mask used in selective area growth. This can be a fundamental input to the design of optical interconnects and integrated photonic devices.