Hydrogen Effects On Heteroepitaxial Growth Of Ge Films On Si

Ge/Si and Si1 -xGex/Si heterostructures have attracted considerable attention from a viewpoint of bandgap engineering in realizing high-performance devices such as high-electron-mobility transistors (HEMT's) [1] and very low resistivity ohmic contacts in ultra-large scale integrated circuits (ULSI's) [2]. Moreover, three-dimensional (3D) Ge islands formed on Si surfaces have been also expected to fabricate quantum-structure devices, recently. However, in applying the Ge/Si heterostructures to these nanometer-scale devices, it is not sufficiently ,achieved yet to realize the formation of an abrupt and flat interface and the control of the size and density of quantum structures.