A 26ps Selective Epitaxial Bipolar Technology

A high performance, selfaligned bipolar transistor has been developed by using the SEG (Selective Epitaxial Growth) - technology. Key features of the SEG-transistor are an extremely shallow, active collector depth in conjunction with a diffused arsenic buried layer exhibiting a thickness of only 450nm and a transition sharpness of about 50nm over two doping decades.