An asymmetric memory cell using a C-TFT for single-bit-line SRAM's

This paper proposes a compact single-bit line SRAM memory cell, which we call an asymmetric memory cell (AMC), using a complementary thin-film transistor (C-TFT). A C-TFT is composed of a top-gate n-channel TFT and a bottom-gate p-channel TFT. The proposed cell size can be reduced to 88% as compared with the conventional one using 0.4-/spl mu/m design rules. Stable read and write operations under low-voltage can be realized by using a C-TFT.