GaAs pin-photodiodes with an AlGaInP window layer for use in 650-nm wavelength GI-POF data links

GaAs pin-photodiodes (PIN-PDs) with a wide bandgap AlGaInP window layer were demonstrated for a graded-index plastic optical fiber (GI-POF) data link at a wavelength of 650 nm as a high-speed and low-bias operation receiver. High quantum efficiency of over 80% was obtained in the wavelength range from 600 to 850 nm. A 3-dB bandwidth of 4.3 GHz was achieved in 90 μm/spl phi/ PIN-PDs. High speed operation up to 600 Mb/s in 210 μm/spl phi/ PIN-PDs was demonstrated under the bias free condition.