Dual-damascene interconnects with 0.28 /spl mu/m vias using in situ copper doped aluminum chemical vapor deposition

Aluminum-copper damascene interconnects have been formed using a chemical vapor deposition technique for the first time. Hydrogen plasma pretreatment for air-exposed TiN layers has been developed in order to fill high-aspect ratio vias and trenches. Al-0.5wt%Cu films were deposited sequentially as Al/Cu/Al films using metal organic precursors. 0.18 /spl mu/m wide trenches with an aspect ratio of 5 were filled with Al-Cu. Dual-damascene via-chains including 0.28-/spl mu/m-diameter vias were formed, and the via resistance was 1.3 /spl Omega/.