A 0.24-/spl mu/m/sup 2/ cell process with 0.18-/spl mu/m width isolation and 3-D interpoly dielectric films for 1-Gb flash memories

We have developed a 0.24-/spl mu/m/sup 2/ contactless-array flash memory cell by using 0.2-/spl mu/m process technology. For reducing the data line pitch, a 0.18-/spl mu/m-wide self-aligned shallow groove isolation (SGI) is formed between memory cells, by filling the grooves with boron phosphosilicate glass (BPSG), to maintain the isolation breakdown voltage. In addition, three-dimensional (3-D) CVD SiO/sub 2/ single-layer interpoly dielectric films with high capacitance are employed to decrease the internal operating voltage by increasing the coupling ratio. These processes are the keys to fabricating 1-Gb flash memory cells.