Novel concept for high level overdrive tolerance of GaAs based FETs

A novel FET concept, using low temperature grown GaAs as surface passivation and buffer layer material, has been developed to tolerate high levels of input overdrive and to improve ESD resistance. It is shown, that high input levels, 17dB beyond the 1dB compression point, do not lead to the burn out of the device and that at the same time thle ESD failure voltage can be increased compared to conventional GaAs based MESFETs.