Extremely radiation stable rectifiers and photovoltaic converters based at thin-film heterojunctions of intrinsic semiconductors

The nonlinear charge carriers transport had been investigated at the metal-intrinsic semiconductor-metal (M-i-M) and heterojunction of two intrinsic semiconductors (i-i) structures. It is shown that if the film thickness is of order of Debye screening radius, the current-voltage characteristics of the structures mentioned become comparable to those observed for the usual junctions based on doped semiconductors.