Hole bypassing N/sup +/ emitter structure of the trench IGBT for the safe switching operation

A new trench IGBT structure which employs the hole bypassing N/sup +/ emitter region has been proposed. Numerical simulation and experimental results show that the short circuit immunity of the proposed trench IGBT is improved with increase of the hole bypassing width to total channel width ratio, /spl gamma/. As /spl gamma/ increases from 0 to 0.8, the short circuit time increases from 6 to 13 /spl mu/sec without sacrifice of the forward conduction characteristics.