Calibration of electrothermal power device models using combined characterization techniques

For the predictive simulation of the operation of power semiconductor devices, physically rigorous models and careful calibration are indispensable. This work presents an advanced methodology for the validation and calibration of electrothermal power device models. It is based on the adjustment of simulation results to measured terminal characteristics, internal carrier concentration and temperature profiles. As instructive examples, we demonstrate the calibration of mobility and carrier lifetime models for two commercially available IGBT types.