Particle transport reduction in a serial high current implanter

Particle contamination data is presented for the serial high-current ion implanter, the SHC-80. Unlike conventional high-current implanters, this system combines an endstation resembling a medium current implanter with an ion beam system combining a wide ribbon beam with high transmission. In batch high current ion implanters, particles generated within the beamline can be transported to the wafer by the beam, and in many instances this is the dominant source of contamination. The trapping of particles within plasmas is known, and is increasingly understood. An ion beam creates a plasma in which the beam ions propel particles in the beam direction through direct collisions. The SHC-80 has a lower beam current density by a factor of up to 100, reduced beam strike, no postacceleration, and features to inhibit the guiding of particles to the wafer. Experimental data have been taken so as to separate the beam-borne particles as much as possible from other sources.