Direct bonding of high quality InP on Si and its application to optoelectronic devices

We present the bonding of high quality InGaAs/InP MQW structures on Si. The etch-pit densities (EPDs) of the InP surfaces were significantly low (/spl sim/10/sup 4/ cm/sup -2/). The dislocation reduction mechanism was deduced from the results obtained by using transmission electron microscopy (TEM) and by comparing buffer layer structures on Si. We also report on low threshold room temperature (RT) continuous-wave (CW) operation of InGaAs/InGaAsP MQW lasers on Si. Furthermore, monolithic integration of lasers with Si V-grooves after bonding was tried and the preliminary results are reported.