High temperature and reliable operation of 630 nm-band InGaAlP tensile-strained multiquantum-well laser diodes

Summary form only given. High temperature and reliable operation of 635 nm tensile strained InGaP multiquantum-well laser diodes has been achieved. An output power level of 10 mW was sustainable up to 80/spl deg/C and stable operation of over 1000 hours, for an output of 5 mW, at 50/spl deg/C, was observed.