Transient voltage induced leakage current in power diode with SIPOS resistive field plate

Leakage current of current diode was found to flow at a much lower voltage than that of avalanche breakdown under the conditions of high voltage rise rate (dV/dt) and low frequency, and this leakage current was characteristic of semi-insulating polycrystalline silicon (SIPOS) resistive field plate (RFP). This current has not been reported previously, and we call it transient voltage induced leakage current (TVIC). TVIC can be suppressed by optimizing the reduced surface field (RESURF) structure. The electric charge for TVIC increased as both the applied voltage and the pulse time interval increased whereas it decreased as the temperature increased. A possible model explaining TVIC mechanism was presented.