Improved 3.5 kV IGBT-diode chipset and 800 A module applications

A major feature of the improved IGBT-diode chipset is the quasi temperature independent switching losses. The temperature coefficients of the diode on-state voltage and the IGBT saturation voltage are positive. The cell area portion of the IGBT is optimized with respect to a low saturation voltage and short-circuit current. Due to the negligible recombination within the n base of the used NPT-IGBT structure, the short circuit current is independent of the collector emitter voltage.