Integrated coplanar mm-wave amplifier with gain control using a dual-gate InP HEMT

A variable gain mm-wave amplifier, based on InP HEMT devices, is demonstrated. The measured gain control range of 14 dB is the largest reported in the mm-wave range for a monolithically integrated variable gain amplifier. The two stage circuit consists of a single gate transistor and a dual-gate transistor. The circuit has a maximum gain of 22 dB at 44 GHz and a bandwidth of 14.6 GHz. The circuit was fabricated in coplanar technology.