Selective photodiodes with two-coordinate sensitivity (quadrants) on the basis of InGaAsP quaternary compounds

A new structure of the selective diode-quadrant prepared on the basis of InP-InGaAsP semiconductor heterostructures is presented in this article. The diode-quadrant has a circular form and consists of five photosensitive segments: four for determination of position of incident light radiation and the fifth a protective peripheric ring. The advantages of these diodes are: the high selectivity of spectral photosensitivity (semi-width of photosensitivity spectrum:75-85 nm) and high quantum efficiency (60-65%).