An evaluation of SOI technologies for high performance analog bipolar circuits

Summary form only given. Characterization results of analog circuits fabricated on dielectric isolation (DI), bonded wafer SOI and multiple implant separation by implantation of oxygen (SIMOX) substrates are reported. The DI parts were manufactured using standard processing technology while the SIMOX and bonded wafer SOI circuits utilized the front-side fabrication method. The SIMOX substrates were prepared using three 5E17 implants at an energy of 200 keV and a temperature of 600 degrees C. The anneals were performed at 1285 degrees C for 2 hours. DC parameters for JFET input op amps fabricated on DI, bonded, and SIMOX substrates are presented. Good agreement is seen between the DC parameters for all three materials. However, the input offset voltage was generally higher for bonded and SIMOX substrates. This has been attributed to trench-related defects, based on Wright etched samples and comparisons of single transistors in each technology.<
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