Millimeter wave power performance of InAlAs/InGaAs/InP HEMTs

The DC and microwave power performance of both lattice-matched and pseudomorphic InAlAs/InGaAs/InP high electron mobility transistors HEMT lattice-matched to an InP substrate yielded peak power-added efficiency of 52% with power gain of 10.5 db and power density of 0.41 W/mm. When the HEMT was biased and tuned for maximum output power, a power density of 0.78 W/mm and power-added efficiency of 44% with 10.2 dB power gain were measured. At 60 GHz, a 0.15- mu m-gate-length and 50- mu m-gate-width InP-based HEMT with a pseudomorphic channel demonstrated 41% peak power-added efficiency with 7.2 dB power gain and 0.35 W/mm power density. A similar device also exhibited peak power-added efficiency of 26% with power gain of 4.9 dB and output power density of 0.2 W/mm at 94 GHz.<
>