Dielectric study of Al/Ho/sub 2/O/sub 3//Al thin-film sandwiches by means of the time domain current response method

The authors present results of dielectric studies of holmium oxide (Ho/sub 2/O/sub 3/) thin films sandwiched between aluminum electrodes. The results show that the dielectric response of Al/Ho/sub 2/O/sub 3//Al structures is very similar to that obtained earlier for thin-film capacitors with rare-earth metal oxides (e.g. Dy/sub 2/O/sub 3/, Yb/sub 2/O/sub 3/, and Tm/sub 2/O/sub 3/) used as insulators. The dielectric behavior of these structures is connected with volume as well as with interfacial phenomena.<
>