Device quality amorphous silicon alloy materials

Device-quality hydrogenated amorphous silicon selenium and amorphous silicon sulfur alloys were prepared by plasma-enhanced chemical vapor deposition with hydrogen dilution. The flow rate ratio of hydrogen to silane was about 8:1. The optical and electrical properties and the structural defect of the alloy films were investigated. The results showed that the film quality deposited in a hydrogen-rich environment was greatly improved compared to that of alloys prepared without hydrogen dilution. The presence of hydrogen in the RF discharge plasma may sputter off the weaker bonding of film precursor, lead to a dense network, and consequently improve the film quality.<
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