Large scale production of uniform GaInP/GaAs structures by low pressure MOVPE in a multiwafer planetary reactor (solar cell manufacture)

Using the results from theoretical calculations and a proven reactor technique, GaInP material was grown for optical solar cell applications on large substrate areas which had the uniformity required by highly developed devices. The data obtained from growing the GaInP material were then applied to the large planetary reactor cell and showed similar results in terms of single wafers, but with the added advantage of producing multiple clones of this one wafer at a time.<
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