High-speed nin-waveguide modulator and switch

Waveguide nin-modulators and switches using strained InGaAs/GaAs MQW active layers are investigated with emphasis on high-speed modulation and efficient switching properties at wavelengths of about 0.98 /spl mu/m. Based upon an nin-cross-section and a coplanar Schottky diode design we realized high-speed absorption modulators and digital optical switches utilizing both absorption edge shift and field-induced waveguiding due to the quantum-confined Stark effect in the depletion region.