Design and CBE growth of strain-balanced InAsP/GaInP short-period superlattice for long-wavelength MQB

A strain-balanced InAsP/InP/GaInP short-period superlattice with period of 15 monolayer with 2% compressive well and 2% tensile barrier strain has been grown by CBE with 1 monolayer InP as intermediate layer. A superlattice with uninterrupted flow of TMIn and PH/sub 3/ at the well-barrier interfaces gave the best results. When the superlattice is grown at the p-side of an InP p-n homojunction, the turn-on voltage due to the superlattice was 0.3 V. It has been estimated that a laser diode loaded with such a superlattice at the p-side should have an operating current density not more than 3.3 kA/cm/sup 2/.