A miniaturized W-band monolithic dual-gate InAlAs/InGaAs HEMT mixer

A miniaturized W-band dual-gate HEMT mixer has been demonstrated using InAlAs/InGaAs HEMT technology. The circuit provides on-chip RF/LO coupling and integrates the HEMT, RF/LO/IF matching circuits and bias lines on a 1 mm /spl times/ 1 mm chip. The dual-gate mixer showed a conversion loss of 3 dB with 5 dBm LO power and had an RF return loss better than 10 dB over a wide range of frequencies (87 GHz-100 GHz). The LO-to-RF isolation was better than 17 dB for W-band operation.<
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