A 34 ns 256 Mb DRAM with boosted sense-ground scheme

This boosted sense-ground (BSG) scheme extends the data retention time of a 256 Mb CMOS DRAM. This scheme features a "L" bitline level slightly boosted to suppress sub-threshold current of unselected memory-cell access transistors in the activated memory mats for the sake of the effective negative gate-source voltage (Vgs).<
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