Characterization of YBaCuO and ErBaCuO thin films deposited on silicon and gallium arsenide substrates

YBaCuO and ErBaCuO films have been deposited on Si substrates with and without a ZrO/sub 2/ buffer layer and on GaAs substrates by RF diode sputtering from stoichiometric oxide targets. The films and interface between the films and semiconductor substrates are analyzed by Rutherford backscattering spectrometry (RBS), X-ray fluorescence spectroscopy (XRF), Auger electron spectroscopy (AES), energy dispersive X-ray spectrometry (EDAX), and scanning electron microscopy (SEM). The films grown on Si substrates with a ZrO/sub 2/ buffer layer show superconductivity above 65 K, and no significant interaction at the interface is observed. High-T/sub c/ films can be obtained either by slow-furnace annealing or by rapid heat-pulse annealing. No significant interaction is observed between YBaCuO (ErBaCuO) and GaAs after rapid thermal annealing at temperatures below 750 degrees C.<
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