Investigation on Impact of Doped HfO$_{2}$ Thin Film Ferro-Dielectrics on FDSOI NCFET Under Back-Gate Bias Influence

In this article, negative capacitance effect on metal-ferro-metal-insulator-semiconductor (MFMIS) type FDSOI negative-capacitance-FET (NCFET) has been investigated by considering two well known thin-film ferro-dielectric (
$ Fe$
) materials HZO (zirconium:HfO
$_{2}$
) and HSO (silicon:HfO
$_{2}$
). The investigations are carried out in a well calibrated TCAD environment, where the gate-charge (
$ Q_{G}$
) is extracted from the TCAD simulation. And, subsequently computing the ferro-voltage (
$ V_{Fe}$
) across
$ Fe$
-capacitor to estimate the total effective gate voltage (
$ V_{GS}$
) on the gate-stack of FDSOI NCFET. The depicted values are subjected to increment in
$ Fe$
-thickness (
$ t_{Fe}$
) to optimize HZO and HSO
$ Fe$
-materials for FDSOI NCFET(s). The optimised NCFET(s) are later levied with back-gate bias (V
$_{\mathrm{B}}$
) variation with the motivation of utilizing the attributes of FDSOI MOSFETs of V
$_{\text{TH}}$
shift can further enhance the device performance. Depicted results has shown the HZO-
$ Fe$
offers superior improvement in sub-threshold slope (SS), peak-transconductance (g
$ _{m}$
) and off-current (I
$_{\text{OFF}}$
) at lower
$ t_{Fe}$
with the expense of lower endurance to hysteresis. On the other hand, the HSO-
$ Fe$
predicts improvement in SS, peak-g
$ _{m}$
and I
$_{\text{OFF}}$
with higher endurance towards hysteresis in-spite of
$ t_{Fe}$
thickness under sub-10 nm regime. Similarly, the V
$_{\mathrm{B}}$
variation have shown similar results where the HSO NCFET has predicted slightly higher enhancement in performance aspect than HZO NCFET owing to the V
$_{\text{TH}}$
shift phenomena attributed to FDSOI architecture and HSO-
$ Fe$
comprehensible polarization duality.