Radio Frequency Characteristics of InGaAs FE-FETs With Scaled Channel Length

RF performance comparison between InGaAs MOSFETs and ferroelectric field-effect transistors (FE-FETs) as a function of channel length (
${L}_{{\text {ch}}}$
) is investigated using a technology computer-aided design (TCAD) simulator. The RF characteristics and energy efficiencies of FE-FETs are shown to have performance parity or even inferiority as compared with the conventional MOSFETs at relatively long
${L}_{{\text {ch}}}$
. However, as
${L}_{{\text {ch}}}$
scaled down, FE-FETs with substantial performance enhancement are observed. The highest improvement in unit gain cutoff frequency (
${f}_{T}$
) and maximum oscillation frequency (
${f}_{{\text {MAX}}}$
) is 15.4% (
${L}_{{\text {ch}}} = {75} \,\,\text {nm}$
) and 22.5% (
${L}_{{\text {ch}}} =85$
nm), respectively. In addition, for FE-FETs, device energy efficiencies are shown to achieve much higher improvement of 53.4% and 69.3% in transconductance generation factor (TGF) and transconductance frequency product (TFP), respectively, at an optimized
${L}_{{\text {ch}}}$
of 15 nm. The superior RF properties obtained in FE-FETs can be attributed to the higher effective electron velocity (
${V}_{{\text {eff}}}$
), better gate controllability, and reduced gate resistance (
${R}_{{\text {g}}}$
).