An accurate method for extracting the critical field in short channel NMOS devices

In this paper, an accurate method for extracting the critical field Ec in short channel MOSFET's is presented. The principle of this method is based on the comparison between two models which give drain saturation voltage evolution against gate voltage Vd/sub sat/(Vg) continuously. The results obtained by this technique have shown better agreement with measurement data and have allow at the same time to determine the validity domain of Sodini's law.