Theoretical modeling of PtSi/porous Schottky detectors

The current-voltage characteristic of PtSi/porous Si Schottky detectors has been modeled. It is assumed that high electric fields are developed at sharp and irregular edges of the porous surface, causing avalanche and tunneling breakdown. The shape of the I-V curve, its change with temperature, its response to near and far IR, and the large quantum efficiency are satisfactorily explained by this model.