Temperature dependence of R/sub on,sp/ in silicon carbide and GaAs Schottky diode

The critical properties of power devices are high reverse breakdown voltage and low forward ON state resistance, R/sub on,sp/, during high forward current density operation. Both of these parameters are very sensitive to temperature. Nowadays silicon carbide (SiC) and GaAs are two most important materials for power device applications. SiC has been widely accepted as being superior to GaAs because it has much higher electric breakdown field, saturated electron drift velocity and thermal conductivity. In this work, the electrical performance and reliability of SiC Schottky diodes (SD) are evaluated and compared to commercially available GaAs SDs. High temperature device characterization has been performed. The specific ON resistance R/sub on,sp/ was found to increase with temperature according to T/sup 0.72/ dependence for GaAs and T/sup 1.89/ for SiC. The strong temperature dependence of R/sub on,sp/ is consistent with phonon scattering theory. Based on Baliga's figure-of-merit (BFOM) model, our result shows that under higher operating temperature (> 210 /spl deg/C) the GaAs devices have lower R/sub on,sp/ than SiC, thus, it may be preferable to use GaAs over SiC for some high temperature power applications.