Rapid thermal annealing of arsenic implanted silicon wafers

Rapid thermal annealing of /sup 75/As/sup +/ implanted Si wafer (200mm in diameter) was done using a lamp-based RTP system and a single wafer rapid thermal furnace system under 1 atm N/sub 2/ atmosphere to mainly understand electrical activation and dopant diffusion phenomena. The implant energy and does were varied in the range of 3keV/spl sim/70keV and 1/spl times/10/sup 15//spl sim/1/spl times/10/sup 16/ atoms/cm/sup 2/, respectively. Average sheet resistance and its uniformity of /sup 75/As/sup +/ implanted wafers were measured after annealing. Arsenic depth profiles were investigated using the secondary ion mass spectroscopy.