A 1.0 V V/sub DD/ CMOS active pixel image sensor with complementary pixel architecture fabricated with a 0.25 /spl mu/m CMOS process

A 128/spl times/128 complementary CMOS active-pixel sensor (CAPS) is fabricated in 0.25 /spl mu/m CMOS for low-voltage application. A single-slope with correlated double sampling (CDS) is used in the readout circuit. The chip operates at a V/sub DD/ as low as 0.8 V with 15 dB added dynamic range compared with conventional CMOS APS.