Add-on Cu/SiLK/sup TM/ module for high Q inductors

Thick Cu single damascene inductors are integrated on top of a standard aluminum three-levels-of-metal (3LM) back-end of line (BEOL) silicon process. The obtained Q factors are more than four times higher than Q factors of the inductors of the same geometry processed in the Al 3LM BEOL. For an inductor of 3 nH designed for 2-GHz frequency applications and fabricated in thick Cu/SiLK/sup TM1/ as an add-on module, a Q factor of /spl sim/24 is reached. A compact two-section lumped element SPICE model is proposed and validated for both inductors in thick Cu/SiLK/sup TM/ and inductors in standard aluminum 3LM BEOL.