Side-mode gain in grating-tuned extended-cavity semiconductor lasers: investigation of stable single-mode operation conditions

In semiconductor lasers, nonlinear phenomena inside the active medium change the side-mode gain with respect to the static threshold-gain. For a given side mode, the sign and the magnitude of the change depend on the lasing-mode optical power and on the wavelength detuning from the lasing mode. If the side-mode gain is enhanced, mode-hopping can occur toward a side mode whose loss is higher than the lasing-mode one. Conversely, in the case of side-mode-gain suppression, the side-mode loss can be smaller with no mode-hop. In this paper, effects of carrier-density pulsation, carrier heating, and spectral-hole burning on the conditions of stable single-mode operation in grating-tuned single-mode extended-cavity semiconductor lasers are investigated. Taking into account the external cavity spectral selectivity and mode coupling, we present a theoretical analysis of experimental results. We perform calculations that compare well with the experimental data obtained with a 1.55-/spl mu/m extended-cavity laser.