A 15-GHz gate array implemented with AlGaAs/GaAs heterojunction bipolar transistors

The authors report on a 500-gate array implemented with AlGaAs/GaAs heterojunction bipolar transistors (HBTs) using an ECL/CML circuit approach. The HBTs have f/sub t/'s and f/sub max/'s above 55 GHz. Frequency dividers personalized on this gate array have shown flip-flop toggle rates up to 15.6 GHz, the highest ever demonstrated with gate arrays. Measurement on delay chains at 2-mA source current showed unloaded gate delay of 26 ps and additional delays of 8 ps/fan-out and 0.12 ps/fF of capacitive load. The gate array has been fabricated successfully in a research laboratory and in a pilot production facility.<
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