Solution-Processed p-Type CuI Thin-Film Transistors With NAND Logic Function

In this article, copper iodide (CuI) is used as the channel layer in thin-film transistors (TFTs) for the first time to realize the NAND logic function.
$\vphantom {_{\int }}$
TFTs are optimized by 80 °C annealing and have an ON/ OFF current ratio of
$2.7\times10$
2 and a field-effect mobility of 0.18 cm2
$\cdot \text{V}$
−1
$\cdot \text{s}$
−1, demonstrating good stability and reproducibility. Furthermore, by using chitosan with electric-double-layer (EDL) effect as the gate dielectric instead of standard silica, the operating voltage can be decreased to 2.0 V. The p-type CuI TFTs have the potential to be used in complementary electronic circuits with low energy consumption as well as portable sensors.