Investigation of Source Region’s Random Doping Fluctuation Effects on Analog and RF Performance in All-Si DG-TFET

In this work, we report the impact of source region’s random dopant fluctuations (RDFs) induced variability on n-type silicon double gate (DG)-TFETs via 3D-device simulation. We have observed that source region’s RDF induces strong variability in the analog and RF figures of merit (FOMs) of the devices. This is the first report showing detailed impact of RDF on DG-TFET device and based circuit. The impact of RDF is analyzed by taking RDF only in source region as tunneling barrier width depends mostly on source doping and so does the ON-state current. The variation of analog and RF FOMs, such as transconductance
$({g}_{m})$
, transconductance generation factor
$({g}_{m}/{I}_{d})$
, output resistance
$({R}_{o})$
, intrinsic gain
$({g}_{m}{R}_{o})$
, capacitances
$({C}_{{gs}}$
,
${C}_{{gd}}$
), gate delay
$({T}_{m})$
, cutoff frequency
$({f}_{T})$
, and subthreshold swing (SS), is reported. We benchmark the device analog and RF performance of the RDF sample with respect to continuum one. On the basis of observed effective deviation in characteristics, common-source amplifier circuit is simulated to analyze the deviation in voltage-transfer characteristic (VTC) and gain–bandwidth product (GBWP).