Effects of surface Fermi level pinning and surface state charging on control characteristics of nanometer scale Schottky gates formed on GaAs

The purpose of this paper is to investigate the effect of the surface Fermi level pinning and surface state charging on gate control characteristics of nanometer-scale Schottky (nano-Schottky) gates on GaAs both theoretically and experimentally. This is a first attempt to establish a realistic model for complicated surface state phenomenon in III-V nanoelectronics.