High performance 100 nm T-gate strained Si/Si/sub 0.6/Ge/sub 0.4/ n-MODFET

100 nm T-gate Si/SiGe n-MODFETs are reported with new record f/sub T/ of 76 GHz (105 GHz), and with f/sub MAX/ of 107 GHz (170 GHz) at temperatures 300 K (50 K), low noise figure NF/sub min/ of 0.4 dB at 2.5 GHz and 300 K. Dependence on biases and temperature of HF performances and main parameters are presented. Experimental results are compared with data from physical simulations at short gate lengths to analyze carrier transport and device optimization.