An analytical model for SiC MESFETs

An improved analytical model for simulating the performance of SiC MESFETs has been developed for use in device design for high frequency, high power applications. The model is based on a two-dimensional analysis of the charge distribution under the gate and incorporates a field-dependent mobility, velocity saturation and charge buildup in the channel. The model is used to generate the large signal current-voltage characteristics of the device and transconductance, output conductance and capacitances for a small signal model.