Polysilicon diodes as temperature sensors for chemical microreaction systems

Lateral polysilicon P/sup +/-N-N/sup +/ and P/sup +/-P-N/sup +/ diodes were fabricated and their electrical properties such as ON current, reverse current and series resistance were studied at various temperatures in the range of 50/spl deg/C to 150/spl deg/C. It was found that both reverse and forward currents of the diodes increased with the temperature. Using these electrical properties as parameters, the lateral polysilicon diodes can be used as temperature sensors in microreaction systems.