AC-Stress Degradation and Its Anneal in SiC MOSFETs

Several important aspects related to the phenomena of ac gate-bias stress-induced threshold-voltage degradation in SiC MOSFETs are presented. These include a detailed investigation of the particular sensitivity of trench-geometry devices when exposed to a negative gate-bias overstress, the specific conditions that drive this degradation, and its recovery by the application of a dc negative bias temperature stress.