Forming-Free NbOx-Based Memristor Enabling Low-Energy-Consumption Artificial Spiking Afferent Nerves

Two-terminal volatile NbO
_x
-based threshold switching memristor devices with electrical self-oscillation behavior have attracted tremendous interest for applications in both oscillators and neural networks. However, the forming process of NbO
_x
devices can be a burden and limit their application. In this study, a forming-free NbO
_x
-based threshold switching device is obtained by reducing the oxygen content of the NbO
_x
film, which simplifies the circuit design of the NbO
_x
device array and improves the device-to-device (D2D) uniformity due to the removal of the forming step. Furthermore, a low-threshold switching voltage is achieved in the forming-free device, indicating a low-power consumption operation. Finally, we demonstrate a low-energy-consumption artificial spiking afferent nerve based on a forming-free NbO
_x
device for spiking neural network (SNN) applications.