Direct experimental evidence for atomic scale structural changes involved in the interface-trap transformation process

We have identified atomic scale processes involved in the so called "interface trap transformation" process. These changes involve the generation of a silicon "dangling bond" defect called P/sub b1/. This defect is somewhat different in electronic density of states and slightly different in physical structure than the dominating radiation induced Si/SiO/sub 2/ interface trap defect, the P/sub b0/ center.