Bulk Field Effect Diode

The field effect diode (FED) is an attractive device to use in various digital and analog applications, but all previously proposed FEDs are based on the silicon-on-insulator (SOI) technology. In this article, a bulk version of FED (BFED) is proposed for the first time. Both SOI-FED and BFED are simulated using TCAD tools as a semiconductor drift-diffusion solver. The proposed bulk FED can operate as well as a regular SOI-FED. Most sensitive parameters in the design of the BFED are doping and thickness of
$\text{p}^{+}$
-drain and
$\text{n}^{+}$
-source. The effect of these parameters is investigated on the output characteristics of the BFED.